BR24L02FVJ-WTR datasheet, PDF - EEWORLD Datasheet

BR24L02FVJ-WTR: Description256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8; Categorystorage storage; File Size616KB，36 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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BR24L02FVJ-WTR Overview

256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

Parameter Name	Attribute value
Maker	ROHM Semiconductor
Parts packaging code	SOIC
package instruction	TSSOP,
Contacts	8
Reach Compliance Code	compli
ECCN code	EAR99
Maximum clock frequency (fCLK)	0.4 MHz
JESD-30 code	S-PDSO-G8
length	3 mm
memory density	2048 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	8
word count	256 words
character code	256
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256X8
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Package shape	SQUARE
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	SERIAL
Certification status	Not Qualified
Maximum seat height	1.1 mm
Serial bus type	I2C
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
width	3 mm
Maximum write cycle time (tWC)	5 ms

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Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

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