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BLF6G22LS-180PN

Description
SILICON, VHF BAND, MIXER DIODE
CategoryDiscrete semiconductor    The transistor   
File Size10MB,130 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BLF6G22LS-180PN Overview

SILICON, VHF BAND, MIXER DIODE

BLF6G22LS-180PN Parametric

Parameter NameAttribute value
package instructionFLATPACK, R-CDFP-F4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandS BAND
JESD-30 codeR-CDFP-F4
Number of components2
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLATPACK
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
RF Manual 16 edition
th
Application and design manual
for High Performance RF products
June 2012
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