Freescale Semiconductor
Technical Data
Document Number: MRF7S21170H
Rev. 5, 4/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1400 mA, P
out
= 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW
Output Power
•
P
out
@ 1 dB Compression Point
w
170 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S21170HR3
MRF7S21170HSR3
2110 - 2170 MHz, 50 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF7S21170HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF7S21170HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 170 W CW
Case Temperature 73°C, 25 W CW
Symbol
R
θJC
Value
(2,3)
0.31
0.36
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006-2008. All rights reserved.
MRF7S21170HR3 MRF7S21170HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1A (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 372
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1400 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 1400 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.72 Adc)
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
C
oss
—
—
0.9
703
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
4.5
0.1
2
2.7
5.4
0.15
2.7
—
6.5
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
500
μAdc
μAdc
nAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 50 W Avg., f = 2112.5 MHz and
f = 2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
15
29
5.7
—
—
16
31
6.1
- 37
- 15
18
—
—
- 35
-9
dB
%
dB
dBc
dB
1. V
GG
= 2 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S21170HR3 MRF7S21170HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Video Bandwidth @ 170 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 50 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 170 W CW
Average Group Delay @ P
out
= 170 W CW, f = 2140 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 170 W CW
f = 2140 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
Symbol
VBW
—
25
—
Min
Typ
Max
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, 2110 - 2170 MHz Bandwidth
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
0.4
1.95
1.7
18
0.015
0.01
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dBm/°C
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor
3
R1
V
BIAS
Z17
V
SUPPLY
+
R2
C1
C2
Z7
C8
C10
C12
C13
R3
RF
INPUT Z1
C3
C5
C6
C4
Z2
Z3
Z4
Z5
Z6
Z8
Z9
Z10
Z11 Z12
Z13
Z14
Z15
RF
OUTPUT
Z16
C17
DUT
C14
Z18
C15
C16
C18
C7
C9
C11
Z1
Z2*
Z3*
Z4*
Z5*
Z6
Z7
Z8
Z9
Z10
0.250″ x 0.083″ Microstrip
0.090″ x 0.083″ Microstrip
0.842″ x 0.083″ Microstrip
0.379″ x 0.083″ Microstrip
0.307″ x 0.083″ Microstrip
0.156″ x 0.787″ Microstrip
1.160″ x 0.080″ Microstrip
0.119″ x 0.787″ Microstrip
0.077″ x 0.880″ Microstrip
0.459″ x 1.000″ Microstrip
Z11
Z12*
Z13*
Z14*
Z15*
Z16
Z17, Z18
PCB
0.060″ x 0.760″ Microstrip
0.129″ x 0.083″ Microstrip
0.436″ x 0.083″ Microstrip
0.490″ x 0.083″ Microstrip
0.275″ x 0.083″ Microstrip
0.230″ x 0.083″ Microstrip
0.900″ x 0.080″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
=2.55
* Variable for tuning
Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values
Part
C1
C2, C3, C7, C8, C17, C18
C4, C15
C5
C6
C9, C10, C11, C12
C13
C14
C16
R1, R2
R3
Description
100 pF Chip Capacitor
6.8 pF Chip Capacitors
0.3 pF Chip Capacitors
0.8 pF Chip Capacitor
0.2 pF Chip Capacitor
10
μF
Chip Capacitors
470
μF,
63 V Electrolytic Capacitor, Radial
0.4 pF Chip Capacitor
0.1 pF Chip Capacitor
10 kΩ, 1/4 W Chip Resistors
10
Ω,
1/4 W Chip Resistor
Part Number
ATC100B101JT500XT
ATC100B6R8BT500XT
ATC100B0R3BT500XT
ATC100B0R8BT500XT
ATC100B0R2BT500XT
C5750X5R1H106MT
477KXM063M
ATC100B0R4BT500XT
ATC100B0R1BT500XT
CRCW12061002FKEA
CRCW120610R0FKEA
Manufacturer
ATC
ATC
ATC
ATC
ATC
TDK
Illinois Capacitor
ATC
ATC
Vishay
Vishay
MRF7S21170HR3 MRF7S21170HSR3
4
RF Device Data
Freescale Semiconductor
R2
R1
C1
C2
C8
C13
C10 C12
R3
C4
C17
CUT OUT AREA
C3
C5
C6
C14
C15
C16
C18
C9
C11
C7
MRF7S21170H
Rev 0
Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor
5
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