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AP40P03GP

Description
Lower Gate Charge Simple Drive Requirement
CategoryDiscrete semiconductor    The transistor   
File Size114KB,5 Pages
ManufacturerAPEC
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AP40P03GP Overview

Lower Gate Charge Simple Drive Requirement

AP40P03GP Parametric

Parameter NameAttribute value
MakerAPEC
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.028 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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