AP2332GEN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Small Package Outline
▼
Surface Mount Device
▼
Halogen Free & RoHS Compliant Product
SOT-23
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S
G
600V
72Ω
51mA
D
I
D
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The special design SOT-23 package with good thermal performance
is widely preferred for all commercial-industrial surface mount
applications using infrared reflow technique and suited for voltage
conversion or switch applications.
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 10V
Continuous Drain Current
3
, V
GS
@ 10V
Continuous Drain Current
4
, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
+32
51
41
68
300
0.5
-55 to 150
-55 to 150
Units
V
V
mA
mA
mA
mA
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
250
Unit
℃/W
1
201212131
Data and specifications subject to change without notice
AP2332GEN-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=60mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=60mA
V
DS
=480V, V
GS
=0V
V
GS
=+32V, V
DS
=0V
I
D
=0.1A
V
DS
=200V
V
GS
=10V
V
DS
=300V
I
D
=60mA
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
600
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
110
-
-
2
1
0.3
10
7
15
70
40
13.5
3.5
Max. Units
-
72
5
-
25
+30
3.2
-
-
-
-
-
-
64
-
-
V
Ω
V
mS
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Test Conditions
I
S
=0.05A, V
GS
=0V
Min.
-
Typ.
-
Max. Units
1.5
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Mounted on min. copper pad FR4 board
4.Mounted on 1 in
2
copper pad FR4 board t < 10s thermal resistance.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2332GEN-HF
60
40
T
A
= 25 C
50
o
I
D
, Drain Current (mA)
I
D
, Drain Current (mA)
10V
7.0V
6.0V
5.0V
T
A
= 150 C
o
30
40
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
30
20
V
G
= 4.0V
20
10
10
0
0
2
4
6
8
0
0.0
2.0
4.0
6.0
8.0
10.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.3
2.8
I
D
=1mA
2.4
1.2
I
D
=60mA
V
G
=10V
Normalized R
DS(ON)
Normalized BV
DSS
2.0
1.1
1.6
1
1.2
0.9
0.8
0.8
-50
0
50
100
150
0.4
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
1.0
2.0
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
I
D
=250uA
0.8
1.5
0.6
I
S
(A)
T
j
=150 C
0.4
o
T
j
=25 C
o
Normalized V
GS(th)
1.0
0.5
0.2
0.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2332GEN-HF
12
100
f=1.0MHz
I
D
=0.1A
V
GS
, Gate to Source Voltage (V)
10
V
DS
=200V
80
C (pF)
8
60
6
40
4
C
iss
20
2
0
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1
Duty factor=0.5
0.1
Operation in this area
limited by R
DS(ON)
100us
1ms
10ms
Normalized Thermal Response (R
thja
)
0.2
0.1
0.1
I
D
(A)
0.05
0.01
100ms
1s
DC
0.02
P
DM
t
T
0.01
0.01
Single Pulse
0.001
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 250℃/W
T
A
=25
o
C
Single Pulse
0.0001
0.001
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
V
G
I
D
, Drain Current (mA)
60
Q
G
10V
Q
GS
40
Q
GD
20
Charge
0
25
50
75
100
125
150
Q
T
A
, Ambient Temperature ( C )
o
Fig 11. Maximum Continuous Drain
Current
v.s. Ambient Temperature
Fig 12. Gate Charge Circuit
4
京公网安备 11010802033920号
EEWORLD
