Power Field-Effect Transistor, 15.5A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | TT Electronics plc |
package instruction | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code | compli |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 600 V |
Maximum drain current (ID) | 15.5 A |
Maximum drain-source on-resistance | 0.4 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-3 |
JESD-30 code | O-MBFM-P2 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Package body material | METAL |
Package shape | ROUND |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | PIN/PEG |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |