Supertex inc.
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
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High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Analog switches
Power management
Telecom switches
TP2104
General Description
Applications
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This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-
proven, silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Part Number
TP2104K1-G
TP2104N3-G
TP2104N3-G P002
TP2104N3-G P003
TP2104N3-G P005
TP2104N3-G P013
TP2104N3-G P014
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Product Summary
Packing
3000/Reel
1000/Bag
BV
DSS
/BV
DGS
-40V
R
DS(ON)
(max)
Package Option
TO-236AB (SOT-23)
3-Lead TO-92
V
GS(th)
(max)
6.0Ω
-2.0V
Pin Configuration
3-Lead TO-92
2000/Reel
DRAIN
DRAIN
SOURCE
GATE
SOURCE
GATE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
TO-236AB (SOT-23)
TO-92
Product Marking
P1LW
W = Code for week sealed
= “Green” Packaging
TO-236AB (SOT-23)
Package may or may not include the following marks: Si or
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Typical Thermal Resistance
Package
TO-236AB (SOT-23)
TO-92
Doc.# DSFP-TP2104
B081313
S iT P
210 4
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92
θ
ja
203
O
C/W
132
O
C/W
Package may or may not include the following marks: Si or
Supertex inc.
www.supertex.com
TP2104
Thermal Characteristics
Package
TO-236AB (SOT-23)
TO-92
(continuous)
I
D
†
(pulsed)
I
D
Power Dissipation
@T
A
= 25
O
C
I
DR
†
-160mA
-175mA
I
DRM
-800mA
-1.0A
-160mA
-175mA
-800mA
-1.0A
0.36W
0.74W
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T = 25°C unless otherwise specified)
A
Sym
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state
resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Min
-40
-1.0
-
-
-
-0.6
-
-
150
-
-
-
-
-
-
-
-
-
Typ
-
-
5.8
-1.0
-
-
-
-
-
0.55
200
35
22
8.0
4.0
4.0
5.0
5.0
-1.2
400
Max
-
-2.0
6.5
-100
-10
-1.0
-
10
6.0
1.0
-
60
30
10
6.0
8.0
9.0
8.0
-2.0
-
Units
V
V
mV/
O
C
nA
μA
mA
A
Ω
%/
O
C
mmho
pF
Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= -10V, V
DS
= -25V
V
GS
= -4.5V, I
D
= -50mA
V
GS
= -10V, I
D
= -500mA
V
GS
= -10V, I
D
= -500mA
V
DS
= -25V, I
D
= -500mA
V
GS
= 0V,
V
DS
= -25V,
f = 1.0 MHz
V
DD
= -25V,
I
D
= -500mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= -500mA
V
GS
= 0V, I
SD
= -500mA
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
10%
90%
t
(OFF)
t
r
t
d(OFF)
t
f
Pulse
Generator
R
GEN
D.U.T.
INPUT
t
(ON)
t
d(ON)
0V
OUTPUT
R
L
VDD
OUTPUT
VDD
Doc.# DSFP-TP2104
B081313
90%
10%
90%
10%
2
Supertex inc.
www.supertex.com
TP2104
Typical Performance Curves
1.1
BV
DSS
Variation with Temperature
20
On-Resistance vs. Drain Current
V
GS
= -4.5V
16
BV
DSS
(normalized)
R
DS(ON)
(ohms)
12
1.0
V
GS
= -10V
8.0
4.0
0.9
-50
0
50
100
150
0
0
-0.4
-0.6
-0.8
-1.2
-2.0
T
j
( C)
O
I
D
(amperes)
-2.0
Transfer Characteristics
V
DS
= -25
O
C
V
GS(th)
and R
DS(ON)
Variation with Temperature
1.2
-1.6
-1.2
1.0
V
GS(th)
@ -1.0mA
1.2
-0.8
25
O
C
0.9
-0.4
125
O
C
1.0
0.8
0.8
0
0
-2.0
-4.0
-6.0
-8.0
10
0.7
-50
0
50
100
150
V
GS
(volts)
T
j
(
O
C)
Capacitance vs. Drain-to-Source Voltage
100
-10
Gate Drive Dynamic Characteristics
V
DS
= -10V
f = 1.0MHz
-8.0
75
C (picofarads)
V
GS
(volts)
-6.0
50
V
DS
= -40V
C
ISS
25
-4.0
125 pF
-2.0
C
OSS
C
RSS
0
0
-10
-20
-30
-40
0
0
35 pF
0.5
1.0
1.5
2.0
2.5
V
DS
(volts)
Q
G
(nanocoulombs)
Doc.# DSFP-TP2104
B081313
3
Supertex inc.
www.supertex.com
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
T
A
= -55
O
C
1.1
R
DS(ON)
@ -10V, -0.5A
1.6
1.4
I
D
(amperes)
TP2104
Typical Performance Curves
(cont.)
-2.0
Output Characteristics
V
GS
= -10V
-2.0
Saturation Characteristics
-1.6
-1.6
I
D
(amperes)
-1.2
I
D
(amperes)
-8V
-1.2
V
GS
= -10V
-8V
-0.8
-6V
-0.8
-0.4
-0.4
-6V
-4V
-4V
0
-3V
0
-10
-20
-30
-40
-50
0
-3V
0
-2.0
-4.0
-6.0
-8.0
-10
V
DS
(volts)
V
DS
(volts)
0.5
Transconductance vs. Drain Current
V
DS
= -25V
1.0
Power Dissipation vs. Temperature
0.4
T
A
= -55
O
C
0.8
TO-92
G
FS
(siemens)
0.2
25
O
C
125
O
C
P
D
(watts)
-0.8
-1.0
0.3
0.6
0.4
SOT-23
0.2
0.1
0
0
-0.2
-0.4
-0.6
0
0
25
50
75
100
125
150
I
D
(amperes)
T
A
(
O
C)
-1.0
Maximum Rated Safe Operating Area
SOT-23 (pulsed)
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
SOT-23 (DC)
-0.1
0.8
I
D
(amperes)
0.6
SOT-23
P
D
= 0.36W
T
A
= 25
O
C
0.4
-0.01
0.2
-0.001
-0.1
T
A
= 25
O
C
-1.0
-10
-100
TO-92
P
D
= 1.0W
T
C
= 25
O
C
0.001
0.01
0.1
1.0
10
0
V
DS
(volts)
Doc.# DSFP-TP2104
B081313
t
P
(seconds)
4
Supertex inc.
www.supertex.com
TP2104
3-Lead TO-236AB (SOT-23) Package Outline (K1)
2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch
D
3
E1 E
0.25
Gauge
Plane
1
e
e1
2
b
L
L1
Seating
Plane
Top View
A
View B
View B
A
A2
Seating
Plane
A1
Side View
A
View A - A
Symbol
Dimension
(mm)
MIN
NOM
MAX
A
0.89
-
1.12
A1
0.01
-
0.10
A2
0.88
0.95
1.02
b
0.30
-
0.50
D
2.80
2.90
3.04
E
2.10
-
2.64
E1
1.20
1.30
1.40
e
0.95
BSC
e1
1.90
BSC
L
0.20
†
0.50
0.60
L1
0.54
REF
θ
0
O
-
8
O
JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO236ABK1, Version C041309.
Doc.# DSFP-TP2104
B081313
5
Supertex inc.
www.supertex.com
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