K6R1008C1D-TI12 datasheet, PDF

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K6R1008C1D-TI12: DescriptionStandard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32; Categorystorage storage; File Size176KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K6R1008C1D-TI12 Overview

Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32

K6R1008C1D-TI12 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP32,.46
Contacts	32
Reach Compliance Code	compli
ECCN code	3A991.B.2.B
Maximum access time	12 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	20.95 mm
memory density	1048576 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP32,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.005 A
Minimum standby current	4.5 V
Maximum slew rate	0.055 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	10.16 mm

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PRELIMINARY

K6R1008C1D

Document Title

128Kx8 Bit High-Speed CMOS Static RAM(5V Operating).

Operated at Commercial and Industrial Temperature Ranges.

CMOS SRAM

Revision History

Rev. No.

Rev. 0.0

Rev. 0.1

Rev. 0.2

History

Initial release with Preliminary.

Current modify

1. Delete 15ns speed bin.

2. Change Icc for Industrial mode.

Item

10ns

CC(Industrial)

12ns

Draft Data

June. 8. 2001

September. 9. 2001

December.18

85mA

75mA

Current

75mA

65mA

June. 19. 2002

Final

Remark

Preliminary

Rev. 1.0

1. Final datasheet release.

2. Delete UB,LB releated AC characteristics and timing diagram.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

Revision 1.0

June 2002

K6R1008C1D-TI12 Related Products

	K6R1008C1D-TI12	K6R1008C1D-JI12	K6R1008C1D-TC12	K6R1008C1D-JC12
Description	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TSOP2	SOJ	TSOP2	SOJ
package instruction	TSOP2, TSOP32,.46	SOJ, SOJ32,.44	TSOP2, TSOP32,.46	SOJ, SOJ32,.44
Contacts	32	32	32	32
Reach Compliance Code	compli	compliant	compliant	compliant
ECCN code	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
Maximum access time	12 ns	12 ns	12 ns	12 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G32	R-PDSO-J32	R-PDSO-G32	R-PDSO-J32
JESD-609 code	e0	e0	e0	e0
length	20.95 mm	20.96 mm	20.95 mm	20.96 mm
memory density	1048576 bi	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8
Number of functions	1	1	1	1
Number of terminals	32	32	32	32
word count	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	70 °C	70 °C
organize	128KX8	128KX8	128KX8	128KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	SOJ	TSOP2	SOJ
Encapsulate equivalent code	TSOP32,.46	SOJ32,.44	TSOP32,.46	SOJ32,.44
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	240	225	240	225
power supply	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	3.76 mm	1.2 mm	3.76 mm
Maximum standby current	0.005 A	0.005 A	0.005 A	0.005 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.055 mA	0.055 mA	0.055 mA	0.055 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	J BEND	GULL WING	J BEND
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	30
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm

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