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934061573115

Description
100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, TSOP-6
CategoryDiscrete semiconductor    The transistor   
File Size109KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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934061573115 Overview

100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, TSOP-6

934061573115 Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN AND PNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
PBLS2021D
20 V, 1.8 A PNP BISS loadswitch
Rev. 02 — 6 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
I
I
I
I
I
Low V
CEsat
(BISS) and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
1.3 Applications
I
I
I
I
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
single pulse;
t
p
1 ms
I
C
=
−1.8
A;
I
B
=
−100
mA
open base
[1]
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
78
Max
−20
−1.8
−3
117
Unit
V
A
A
mΩ
TR1; PNP low V
CEsat
transistor
TR2; NPN resistor-equipped transistor
V
CEO
I
O
R1
R2/R1
[1]
-
-
1.54
0.8
-
-
2.2
1
50
100
2.86
1.2
V
mA
kΩ
Pulse test: t
p
300
µs; δ ≤
0.02.

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