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2004-3

Description
Non-Volatile SRAM, 512X8, 300ns, CMOS
Categorystorage    storage   
File Size300KB,10 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
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2004-3 Overview

Non-Volatile SRAM, 512X8, 300ns, CMOS

2004-3 Parametric

Parameter NameAttribute value
MakerIntel
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time300 ns
Other featuresLOW POWER STANDBY MODE; 10-YEAR DATA RETENTION FOR EACH STORE
memory density4096 bi
Memory IC TypeNON-VOLATILE SRAM
memory width8
Number of functions1
word count512 words
character code512
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512X8
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
technologyCMOS
Temperature levelCOMMERCIAL

2004-3 Related Products

2004-3 2004-2
Description Non-Volatile SRAM, 512X8, 300ns, CMOS Non-Volatile SRAM, 512X8, 200ns, CMOS
Maker Intel Intel
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum access time 300 ns 200 ns
Other features LOW POWER STANDBY MODE; 10-YEAR DATA RETENTION FOR EACH STORE LOW POWER STANDBY MODE; 10-YEAR DATA RETENTION FOR EACH STORE
memory density 4096 bi 4096 bi
Memory IC Type NON-VOLATILE SRAM NON-VOLATILE SRAM
memory width 8 8
Number of functions 1 1
word count 512 words 512 words
character code 512 512
Operating mode ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 512X8 512X8
Parallel/Serial PARALLEL PARALLEL
Certification status Not Qualified Not Qualified
Maximum supply voltage (Vsup) 5.25 V 5.25 V
Minimum supply voltage (Vsup) 4.75 V 4.75 V
Nominal supply voltage (Vsup) 5 V 5 V
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL

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