2004-2 datasheet, PDF - EEWORLD Datasheet

2004-2: DescriptionNon-Volatile SRAM, 512X8, 200ns, CMOS; Categorystorage storage; File Size300KB，10 Pages; ManufacturerIntel; Websitehttp://www.intel.com/

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2004-2 Overview

Non-Volatile SRAM, 512X8, 200ns, CMOS

Parameter Name	Attribute value
Maker	Intel
package instruction	,
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	200 ns
Other features	LOW POWER STANDBY MODE; 10-YEAR DATA RETENTION FOR EACH STORE
memory density	4096 bi
Memory IC Type	NON-VOLATILE SRAM
memory width	8
Number of functions	1
word count	512 words
character code	512
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512X8
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
technology	CMOS
Temperature level	COMMERCIAL

	2004-2	2004-3
Description	Non-Volatile SRAM, 512X8, 200ns, CMOS	Non-Volatile SRAM, 512X8, 300ns, CMOS
Maker	Intel	Intel
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum access time	200 ns	300 ns
Other features	LOW POWER STANDBY MODE; 10-YEAR DATA RETENTION FOR EACH STORE	LOW POWER STANDBY MODE; 10-YEAR DATA RETENTION FOR EACH STORE
memory density	4096 bi	4096 bi
Memory IC Type	NON-VOLATILE SRAM	NON-VOLATILE SRAM
memory width	8	8
Number of functions	1	1
word count	512 words	512 words
character code	512	512
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	512X8	512X8
Parallel/Serial	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	5.25 V	5.25 V
Minimum supply voltage (Vsup)	4.75 V	4.75 V
Nominal supply voltage (Vsup)	5 V	5 V
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL

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