Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Swampscott Electronics Co Inc |
Parts packaging code | TO-66 |
package instruction | FLANGE MOUNT, O-MBFM-P2 |
Contacts | 2 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Maximum collector current (IC) | 8 A |
Collector-emitter maximum voltage | 80 V |
Configuration | DARLINGTON |
Minimum DC current gain (hFE) | 750 |
JEDEC-95 code | TO-66 |
JESD-30 code | O-MBFM-P2 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 200 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | PNP |
Maximum power dissipation(Abs) | 75 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | PIN/PEG |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 4 MHz |