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2N1183

Description
Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Germanium, TO-8, Metal, 3 Pin, TO-8, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size89KB,1 Pages
ManufacturerSwampscott Electronics Co Inc
Download Datasheet Parametric Compare View All

2N1183 Overview

Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Germanium, TO-8, Metal, 3 Pin, TO-8, 3 PIN

2N1183 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSwampscott Electronics Co Inc
Parts packaging codeTO-8
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage20 V
ConfigurationSingle
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-8
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature100 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsGERMANIUM
Nominal transition frequency (fT)0.5 MHz

2N1183 Related Products

2N1183 2N1183A 2N1184 2N1184A
Description Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Germanium, TO-8, Metal, 3 Pin, TO-8, 3 PIN Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, PNP, Germanium, TO-8, Metal, 3 Pin, TO-8, 3 PIN Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Germanium, TO-8, Metal, 3 Pin, TO-8, 3 PIN Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-8, Metal, 3 Pin, TO-8, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Swampscott Electronics Co Inc Swampscott Electronics Co Inc Swampscott Electronics Co Inc Swampscott Electronics Co Inc
Parts packaging code TO-8 TO-8 TO-8 TO-8
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 3 A 3 A 3 A 3 A
Collector-emitter maximum voltage 20 V 30 V 20 V 30 V
Configuration Single Single Single Single
Minimum DC current gain (hFE) 20 20 40 40
JEDEC-95 code TO-8 TO-8 TO-8 TO-8
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0 e0 e0
Number of terminals 3 3 3 3
Maximum operating temperature 100 °C 100 °C 100 °C 100 °C
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 1 W 1 W 1 W 1 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials GERMANIUM GERMANIUM GERMANIUM GERMANIUM
Nominal transition frequency (fT) 0.5 MHz 0.5 MHz 0.5 MHz 0.5 MHz
Number of components 1 - 1 1

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