Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Germanium, TO-8, Metal, 3 Pin, TO-8, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Swampscott Electronics Co Inc |
Parts packaging code | TO-8 |
package instruction | CYLINDRICAL, O-MBCY-W3 |
Contacts | 3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Maximum collector current (IC) | 3 A |
Collector-emitter maximum voltage | 20 V |
Configuration | Single |
Minimum DC current gain (hFE) | 20 |
JEDEC-95 code | TO-8 |
JESD-30 code | O-MBCY-W3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 100 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | PNP |
Maximum power dissipation(Abs) | 1 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | WIRE |
Terminal location | BOTTOM |
Transistor component materials | GERMANIUM |
Nominal transition frequency (fT) | 0.5 MHz |
2N1183 | 2N1183A | 2N1184 | 2N1184A | |
---|---|---|---|---|
Description | Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Germanium, TO-8, Metal, 3 Pin, TO-8, 3 PIN | Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, PNP, Germanium, TO-8, Metal, 3 Pin, TO-8, 3 PIN | Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Germanium, TO-8, Metal, 3 Pin, TO-8, 3 PIN | Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-8, Metal, 3 Pin, TO-8, 3 PIN |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
Maker | Swampscott Electronics Co Inc | Swampscott Electronics Co Inc | Swampscott Electronics Co Inc | Swampscott Electronics Co Inc |
Parts packaging code | TO-8 | TO-8 | TO-8 | TO-8 |
package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
Contacts | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknow | unknow | unknow | unknow |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 3 A | 3 A | 3 A | 3 A |
Collector-emitter maximum voltage | 20 V | 30 V | 20 V | 30 V |
Configuration | Single | Single | Single | Single |
Minimum DC current gain (hFE) | 20 | 20 | 40 | 40 |
JEDEC-95 code | TO-8 | TO-8 | TO-8 | TO-8 |
JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
JESD-609 code | e0 | e0 | e0 | e0 |
Number of terminals | 3 | 3 | 3 | 3 |
Maximum operating temperature | 100 °C | 100 °C | 100 °C | 100 °C |
Package body material | METAL | METAL | METAL | METAL |
Package shape | ROUND | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Polarity/channel type | PNP | PNP | PNP | PNP |
Maximum power dissipation(Abs) | 1 W | 1 W | 1 W | 1 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | WIRE | WIRE | WIRE | WIRE |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
Transistor component materials | GERMANIUM | GERMANIUM | GERMANIUM | GERMANIUM |
Nominal transition frequency (fT) | 0.5 MHz | 0.5 MHz | 0.5 MHz | 0.5 MHz |
Number of components | 1 | - | 1 | 1 |