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2N427

Description
Small Signal Bipolar Transistor, 0.4A I(C), 15V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size111KB,1 Pages
ManufacturerElectronic Transistors Corp
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2N427 Overview

Small Signal Bipolar Transistor, 0.4A I(C), 15V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN

2N427 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerElectronic Transistors Corp
Parts packaging codeTO-5
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.4 A
Collector-emitter maximum voltage15 V
ConfigurationSingle
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature85 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsGERMANIUM
Nominal transition frequency (fT)11 MHz

2N427 Related Products

2N427 2N396A
Description Small Signal Bipolar Transistor, 0.4A I(C), 15V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN
Is it Rohs certified? incompatible incompatible
Maker Electronic Transistors Corp Electronic Transistors Corp
Parts packaging code TO-5 TO-5
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.4 A 0.2 A
Collector-emitter maximum voltage 15 V 20 V
Configuration Single Single
Minimum DC current gain (hFE) 40 30
JEDEC-95 code TO-5 TO-5
JESD-30 code O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 85 °C 100 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.15 W 0.2 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Transistor component materials GERMANIUM GERMANIUM
Nominal transition frequency (fT) 11 MHz 5 MHz

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