Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Devices Inc |
| Parts packaging code | BCY |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 1 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | Single |
| Minimum DC current gain (hFE) | 15 |
| JEDEC-95 code | TO-18 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.5 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 40 MHz |
| 2N719A | 2N1716 | 2N4238 | 2N551 | 2N560 | 2N698 | 2N760A | |
|---|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN | Small Signal Bipolar Transistor, 0.75A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-29, TO-29, 3 PIN | Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | International Devices Inc | International Devices Inc | International Devices Inc | International Devices Inc | International Devices Inc | International Devices Inc | International Devices Inc |
| Parts packaging code | BCY | TO-5 | TO-5 | TO-5 | TO-29 | TO-5 | BCY |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-XBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
| Collector-emitter maximum voltage | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Configuration | Single | Single | Single | Single | Single | Single | Single |
| Minimum DC current gain (hFE) | 15 | 40 | 30 | 20 | 20 | 15 | 36 |
| JEDEC-95 code | TO-18 | TO-5 | TO-5 | TO-5 | TO-29 | TO-5 | TO-18 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-XBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 200 °C | 175 °C | 175 °C | 200 °C | 150 °C | 200 °C | 200 °C |
| Package body material | METAL | METAL | METAL | METAL | UNSPECIFIED | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.5 W | 0.8 W | 0.8 W | 0.6 W | 0.5 W | 0.8 W | 0.5 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 40 MHz | 16 MHz | 1 MHz | 3 MHz | 50 MHz | 40 MHz | 50 MHz |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 |
| Maximum collector current (IC) | 1 A | 0.75 A | 1 A | 0.2 A | 0.1 A | - | 0.1 A |
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