2N657A datasheet, PDF - EEWORLD Datasheet

2N657A: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size98KB，1 Pages; ManufacturerInternational Devices Inc

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Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Devices Inc
Parts packaging code	TO-5
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	100 V
Configuration	Single
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-5
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	5 MHz

	2N657A	2N3659
Description	Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN	Power Bipolar Transistor, 0.5A I(C), 170V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
Is it Rohs certified?	incompatible	incompatible
Maker	International Devices Inc	International Devices Inc
Parts packaging code	TO-5	TO-5
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	100 V	170 V
Configuration	Single	Single
Minimum DC current gain (hFE)	30	20
JEDEC-95 code	TO-5	TO-5
JESD-30 code	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	175 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	1 W	4 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	5 MHz	50 MHz

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