|
2N3659 |
2N657A |
Description |
Power Bipolar Transistor, 0.5A I(C), 170V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN |
Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN |
Is it Rohs certified? |
incompatible |
incompatible |
Maker |
International Devices Inc |
International Devices Inc |
Parts packaging code |
TO-5 |
TO-5 |
package instruction |
CYLINDRICAL, O-MBCY-W3 |
CYLINDRICAL, O-MBCY-W3 |
Contacts |
3 |
3 |
Reach Compliance Code |
unknow |
unknow |
ECCN code |
EAR99 |
EAR99 |
Maximum collector current (IC) |
0.5 A |
0.5 A |
Collector-emitter maximum voltage |
170 V |
100 V |
Configuration |
Single |
Single |
Minimum DC current gain (hFE) |
20 |
30 |
JEDEC-95 code |
TO-5 |
TO-5 |
JESD-30 code |
O-MBCY-W3 |
O-MBCY-W3 |
JESD-609 code |
e0 |
e0 |
Number of components |
1 |
1 |
Number of terminals |
3 |
3 |
Maximum operating temperature |
175 °C |
200 °C |
Package body material |
METAL |
METAL |
Package shape |
ROUND |
ROUND |
Package form |
CYLINDRICAL |
CYLINDRICAL |
Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
NOT SPECIFIED |
Polarity/channel type |
NPN |
NPN |
Maximum power dissipation(Abs) |
4 W |
1 W |
Certification status |
Not Qualified |
Not Qualified |
surface mount |
NO |
NO |
Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Terminal form |
WIRE |
WIRE |
Terminal location |
BOTTOM |
BOTTOM |
Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
Transistor component materials |
SILICON |
SILICON |
Nominal transition frequency (fT) |
50 MHz |
5 MHz |