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2N618

Description
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Germanium, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size136KB,1 Pages
ManufacturerInternational Devices Inc
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2N618 Overview

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Germanium, TO-3, Metal, 2 Pin, TO-3, 2 PIN

2N618 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Devices Inc
Parts packaging codeTO-204AA
package instructionFLANGE MOUNT, O-MBFM-P2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage60 V
ConfigurationSingle
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature95 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)45 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsGERMANIUM
Nominal transition frequency (fT)0.0085 MHz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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