2N587 datasheet, PDF - EEWORLD Datasheet

2N587: DescriptionPower Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, NPN, Germanium, TO-5, Metal, 3 Pin, TO-5, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size104KB，1 Pages; ManufacturerInternational Devices Inc

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2N587 Overview

Power Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, NPN, Germanium, TO-5, Metal, 3 Pin, TO-5, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Devices Inc
Parts packaging code	TO-5
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	20 V
Configuration	Single
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-5
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	GERMANIUM

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