2N5682 datasheet, PDF - EEWORLD Datasheet

2N5682: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size97KB，1 Pages; ManufacturerInternational Devices Inc

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Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Devices Inc
Parts packaging code	TO-5
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	120 V
Configuration	Single
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-5
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

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