2N5430 datasheet, PDF - EEWORLD Datasheet

2N5430: DescriptionPower Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size138KB，1 Pages; ManufacturerInternational Devices Inc

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Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Devices Inc
Parts packaging code	TO-66
package instruction	FLANGE MOUNT, O-MBFM-P2
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	7 A
Collector-emitter maximum voltage	100 V
Configuration	Single
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-66
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	40 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

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