RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, PNP, TO-106, TO-106, 4 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Devices Inc |
| Parts packaging code | BCY |
| package instruction | CYLINDRICAL, O-MBCY-W4 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.08 A |
| Collector-based maximum capacity | 3.5 pF |
| Collector-emitter maximum voltage | 12 V |
| Configuration | Single |
| Minimum DC current gain (hFE) | 30 |
| JEDEC-95 code | TO-106 |
| JESD-30 code | O-MBCY-W4 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 125 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.2 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 500 MHz |
| 2N3640 | 2N4207 | MPS3640 | |
|---|---|---|---|
| Description | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, PNP, TO-106, TO-106, 4 PIN | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, PNP, TO-18, TO-18, 3 PIN | RF Small Signal Bipolar Transistor, 0.08A I(C), Silicon, PNP, TO-226AA, TO-226AA, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | International Devices Inc | International Devices Inc | International Devices Inc |
| Parts packaging code | BCY | BCY | TO-92 |
| package instruction | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-PBCY-T3 |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | unknow | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.08 A | 0.05 A | 0.08 A |
| Collector-based maximum capacity | 3.5 pF | 3 pF | 3.5 pF |
| Collector-emitter maximum voltage | 12 V | 6 V | 12 V |
| Configuration | Single | Single | Single |
| Minimum DC current gain (hFE) | 30 | 50 | 30 |
| JEDEC-95 code | TO-106 | TO-18 | TO-226AA |
| JESD-30 code | O-MBCY-W4 | O-MBCY-W3 | O-PBCY-T3 |
| JESD-609 code | e0 | e0 | e0 |
| Number of terminals | 4 | 3 | 3 |
| Maximum operating temperature | 125 °C | 200 °C | 150 °C |
| Package body material | METAL | METAL | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 0.2 W | 0.3 W | 0.625 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | THROUGH-HOLE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 500 MHz | 650 MHz | 500 MHz |
| Number of components | 1 | 1 | - |
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