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2N2192

Description
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size102KB,1 Pages
ManufacturerInternational Devices Inc
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2N2192 Overview

Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN

2N2192 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Devices Inc
Parts packaging codeTO-5
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage40 V
ConfigurationSingle
Minimum DC current gain (hFE)75
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz

2N2192 Related Products

2N2192 2N3569
Description Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-105, TO-105, 4 PIN
Is it Rohs certified? incompatible incompatible
Maker International Devices Inc International Devices Inc
Parts packaging code TO-5 TO-105
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-XBCY-W4
Contacts 3 4
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 1 A 0.5 A
Collector-emitter maximum voltage 40 V 40 V
Configuration Single Single
Minimum DC current gain (hFE) 75 100
JEDEC-95 code TO-5 TO-105
JESD-30 code O-MBCY-W3 O-XBCY-W4
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 4
Maximum operating temperature 175 °C 125 °C
Package body material METAL UNSPECIFIED
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.8 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 50 MHz 60 MHz
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