Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Space Power Electronics Inc |
Parts packaging code | BCY |
package instruction | CYLINDRICAL, O-MBCY-W3 |
Contacts | 3 |
Reach Compliance Code | unknow |
Configuration | SINGLE |
FET technology | JUNCTION |
JEDEC-95 code | TO-18 |
JESD-30 code | O-MBCY-W3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | DEPLETION MODE |
Maximum operating temperature | 200 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | P-CHANNEL |
Maximum power dissipation(Abs) | 0.3 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | WIRE |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
2N2608 | 2N3382 | 2N3384 | 2N5019 | |
---|---|---|---|---|
Description | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-72, TO-72, 4 PIN | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-72, TO-72, 4 PIN | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
Maker | Space Power Electronics Inc | Space Power Electronics Inc | Space Power Electronics Inc | Space Power Electronics Inc |
Parts packaging code | BCY | TO-72 | TO-72 | BCY |
package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL, O-MBCY-W3 |
Contacts | 3 | 4 | 4 | 3 |
Reach Compliance Code | unknow | unknow | unknow | unknow |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
FET technology | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
JEDEC-95 code | TO-18 | TO-72 | TO-72 | TO-18 |
JESD-30 code | O-MBCY-W3 | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W3 |
JESD-609 code | e0 | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 4 | 4 | 3 |
Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
Maximum operating temperature | 200 °C | 150 °C | 150 °C | 200 °C |
Package body material | METAL | METAL | METAL | METAL |
Package shape | ROUND | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
Maximum power dissipation(Abs) | 0.3 W | 0.3 W | 0.3 W | 1.8 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | WIRE | WIRE | WIRE | WIRE |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Transistor component materials | SILICON | SILICON | SILICON | SILICON |