AT29LV256-25PC datasheet, PDF - EEWORLD Datasheet

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AT29LV256-25PC: Description256K 32K x 8 3-volt Only CMOS Flash Memory; Categorystorage storage; File Size139KB，10 Pages; ManufacturerAtmel (Microchip)

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AT29LV256-25PC Overview

256K 32K x 8 3-volt Only CMOS Flash Memory

AT29LV256-25PC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Atmel (Microchip)
Parts packaging code	DIP
package instruction	0.600 INCH, PLASTIC, DIP-28
Contacts	28
Reach Compliance Code	compli
ECCN code	EAR99
Maximum access time	250 ns
Other features	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION
command user interface	NO
Data polling	YES
JESD-30 code	R-PDIP-T28
JESD-609 code	e0
length	36.95 mm
memory density	262144 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	512
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
page size	64 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	5.59 mm
Department size	64
Maximum standby current	0.00002 A
Maximum slew rate	0.015 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	15.24 mm
Maximum write cycle time (tWC)	20 ms

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AT29LV256

Features

•

Single Supply Voltage, Range 3V to 3.6V

3-Volt-Only Read and Write Operation

Software Protected Programming

Low Power Dissipation

15 mA Active Current

µA

CMOS Standby Current

Fast Read Access Time - 200 ns

Sector Program Operation

Single Cycle Reprogram (Erase and Program)

512 Sectors (64 bytes/sector)

Internal Address and Data Latches for 64-Bytes

Fast Sector Program Cycle Time - 20 ms Max.

Internal Program Control and Timer

DATA Polling for End of Program Detection

Typical Endurance > 10,000 Cycles

CMOS and TTL Compatible Inputs and Outputs

Commercial and Industrial Temperature Ranges

256K (32K x 8)

3-volt Only

CMOS Flash

Memory

Description

The AT29LV256 is a 3-volt-only in-system Flash Programmable Erasable Read Only

Memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 200 ns with power dissipation of just 54 mW over the commercial

temperature range. When the device is deselected, the CMOS standby current is less

than 20

µA.

The device endurance is such that any sector can typically be written to

in excess of 10,000 times.

(continued)

PLCC Top View

Pin Configurations

Pin Name

A0 - A14

Function

Addresses

Chip Enable

Output Enable

Write Enable

AT29LV256

I/O0 - I/O7 Data Inputs/Outputs

No Connect

Don’t Connect

TSOP Top View

Type 1

0563A

4-33

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