Variable Capacitance Diode, 33pF C(T), 45V, Silicon, DO-7
Parameter Name | Attribute value |
Maker | International Semiconductor Inc |
package instruction | O-LALF-W2 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Other features | LOW LEAKAGE |
Minimum breakdown voltage | 45 V |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode Capacitance Tolerance | 20% |
Minimum diode capacitance ratio | 2.9 |
Nominal diode capacitance | 33 pF |
Diode component materials | SILICON |
Diode type | VARIABLE CAPACITANCE DIODE |
JEDEC-95 code | DO-7 |
JESD-30 code | O-LALF-W2 |
Number of components | 1 |
Number of terminals | 2 |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Maximum power dissipation | 0.4 W |
Certification status | Not Qualified |
minimum quality factor | 500 |
Maximum repetitive peak reverse voltage | 30 V |
surface mount | NO |
Terminal form | WIRE |
Terminal location | AXIAL |