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1N5470

Description
Variable Capacitance Diode, 33pF C(T), 45V, Silicon, DO-7
CategoryDiscrete semiconductor    diode   
File Size113KB,1 Pages
ManufacturerInternational Semiconductor Inc
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1N5470 Overview

Variable Capacitance Diode, 33pF C(T), 45V, Silicon, DO-7

1N5470 Parametric

Parameter NameAttribute value
MakerInternational Semiconductor Inc
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW LEAKAGE
Minimum breakdown voltage45 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio2.9
Nominal diode capacitance33 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor500
Maximum repetitive peak reverse voltage30 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

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