DO228B-2M datasheet, PDF - EEWORLD Datasheet

DO228B-2M: DescriptionVariable Capacitance Diode, High Frequency to Ultra High Frequency, 15pF C(T), 12V, Silicon; CategoryDiscrete semiconductor diode; File Size60KB，1 Pages; ManufacturerMsi Electronics Inc

Download Datasheet Parametric View All

DO228B-2M Overview

Variable Capacitance Diode, High Frequency to Ultra High Frequency, 15pF C(T), 12V, Silicon

Parameter Name	Attribute value
Maker	Msi Electronics Inc
package instruction	O-LALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	3% MATCHED SET OF TWO DIODES
Minimum breakdown voltage	12 V
Shell connection	ISOLATED
Configuration	SEPARATE, 2 ELEMENTS
Diode Capacitance Tolerance	5%
Minimum diode capacitance ratio	7
Nominal diode capacitance	15 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code	O-LALF-W2
Number of components	2
Number of terminals	2
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
minimum quality factor	175
Maximum reverse current	0.01 µA
Reverse test voltage	10 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components