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DO228A

Description
Variable Capacitance Diode, High Frequency to Ultra High Frequency, 15pF C(T), 12V, Silicon
CategoryDiscrete semiconductor    diode   
File Size60KB,1 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

DO228A Overview

Variable Capacitance Diode, High Frequency to Ultra High Frequency, 15pF C(T), 12V, Silicon

DO228A Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage12 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio7
Nominal diode capacitance15 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandHIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
minimum quality factor175
Maximum reverse current0.01 µA
Reverse test voltage10 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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