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MUR420L

Description
Rectifier Diode, 1 Phase, 1 Element, 4A, 200V V(RRM), Silicon, DO-201,
CategoryDiscrete semiconductor    diode   
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Environmental Compliance
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MUR420L Overview

Rectifier Diode, 1 Phase, 1 Element, 4A, 200V V(RRM), Silicon, DO-201,

MUR420L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDIOTEC
Reach Compliance Codecompli
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.35 V
JEDEC-95 codeDO-201
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
Maximum reverse current10 µA
Maximum reverse recovery time0.06 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
MUR420L ... MUR460L
MUR420L ... MUR460L
Superfast Efficient Rectifier Diodes
Superschnelle Gleichrichter für hohen Wirkungsgrad
Version 2016-12-19
~DO-201
Typical Applications
Rectification of higher frequencies,
High efficient switching stages
Commercial grade
1
)
Features
Budget version of
MUR420..460 series
Compliant to RoHS, REACH,
Conflict Minerals
1
)
Mechanical Data
1
)
Taped in ammo pack
Ø 1.2
±0.05
I
FAV
= 4 A
V
F
< 1.28 V
T
jmax
= 150°C
V
RRM
= 200...600 V
I
FSM
= 110/125 A
t
rr
< 60ns
Typische Anwendungen
Gleichrichtung hoher Frequenzen
Wandlerstufen mit hohem Wirkungsgrad
Standardausführung
1
)
Besonderheiten
Budget-Version der
MUR420...MUR460 Reihe
Konform zu RoHS, REACH,
Konfliktmineralien
1
)
Mechanische Daten
1
)
1700
1.0 g
UL 94V-0
260°C/10s
MSL N/A
Gegurtet in Ammo-Pack
Gewicht ca.
Gehäusematerial
Löt- und Einbaubedingungen
Ø 4.5
+0.1
-
0.3
RoHS
Type
62.5
7.5
Weight approx.
Case material
Solder & assembly conditions
Dimensions - Maße [mm]
Maximum ratings
2
)
Type
Typ
MUR420L
MUR440L
MUR460L
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
200
400
600
EL
V
Pb
±0.5
±0.1
EE
WE
Grenzwerte
2
)
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
200
400
600
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current
Stoßstrom in Fluss-Richtung
Rating for fusing
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Half sine-wave
Sinus-Halbwelle
T
A
= 50°C
f > 15 Hz
50 Hz (10 ms)
60 Hz (8.3 ms)
T
A
= 25°C
I
FAV
I
FRM
I
FSM
i
2
t
T
j
T
S
4 A
3
)
25 A
3
)
110 A
125 A
78 A
2
s
-50...+150°C
-50...+150°C
Characteristics
Leakage current
Sperrstrom
V
R
= V
RRM
T
j
= 25°C
T
j
= 100°C
I
R
I
R
R
thA
Kennwerte
< 10 µA
< 100 µA
< 20 K/W
3
)
Thermal resistance junction to ambient – Wärmewiderstand Sperrschicht – Umgebung
1
2
3
Please note the
detailed information on our website
or at the beginning of the data book
Bitte beachten Sie die
detaillierten Hinweise auf unserer Internetseite
bzw. am Anfang des Datenbuches
T
A
= 25°C unless otherwise specified – T
A
= 25°C wenn nicht anders angegeben
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG
1

MUR420L Related Products

MUR420L MUR460L MUR440L
Description Rectifier Diode, 1 Phase, 1 Element, 4A, 200V V(RRM), Silicon, DO-201, Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, DO-201, Rectifier Diode, 1 Phase, 1 Element, 4A, 400V V(RRM), Silicon, DO-201,
Is it Rohs certified? conform to conform to conform to
Maker DIOTEC DIOTEC DIOTEC
Reach Compliance Code compli compliant compli
ECCN code EAR99 EAR99 EAR99
application EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.35 V 1.35 V 1.35 V
JEDEC-95 code DO-201 DO-201 DO-201
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 125 A 125 A 125 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -50 °C -50 °C -50 °C
Maximum output current 4 A 4 A 4 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 200 V 600 V 400 V
Maximum reverse current 10 µA 10 µA 10 µA
Maximum reverse recovery time 0.06 µs 0.06 µs 0.06 µs
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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