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2SC3660

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size86KB,1 Pages
ManufacturerSilicon Group Inc.
Download Datasheet Parametric View All

2SC3660 Overview

Transistor,

2SC3660 Parametric

Parameter NameAttribute value
MakerSilicon Group Inc.
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)24 A
ConfigurationSingle
Minimum DC current gain (hFE)30
Maximum operating temperature200 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)320 W
surface mountNO

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