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PJV1702_R1_00001

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 650mA Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 380mΩ @ 650mA, 4.5V Maximum power dissipation (Ta =25°C): 150mW Type: N-channel N-channel 20V
CategoryDiscrete semiconductor    The transistor   
File Size247KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJV1702_R1_00001 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 650mA Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 380mΩ @ 650mA, 4.5V Maximum power dissipation (Ta =25°C): 150mW Type: N-channel N-channel 20V

PJV1702_R1_00001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompliant
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)0.65 A
Maximum drain-source on-resistance0.38 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

PJV1702_R1_00001 Preview

Download Datasheet
PPJV1702
20V N-Channel MOSFET
Voltage
Features
20 V
Current
0.65 A
SOT-723
Unit : inch(mm)
Switching with Low R
DS(ON)
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-723 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00005 ounce, 0.0013 gram
Marking: KF
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
a
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
UNITS
V
V
A
A
mW
mW/
o
C
o
o
LIMIT
20
+12
0.65
1.3
150
1.2
-55~150
833
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 1)
C
C/W
January 21,2015-REV.00
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