SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
KTC3875
NPN EPITAXIAL SILICON TRANSISTO
R
Package:
SOT-23
TECHNICAL DATA
General purpose application
*
Complement to KTA1504
*
Collector Current :Ic=150mA
*
low noise:NF=10db(max)
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
60
50
5
150
225
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
PIN:
STYLE
NO.1
1
2
3
B
E
C
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector output capacitance
Noise Figure
Collector-Emitter Saturation Voltage
Symbol
BVcbo
BVceo
BVebo
Icbo
Iebo
Hfe
Cob
NF
Vce(sat)
70
2.0
1.0
0.1
Min
60
50
5.0
100
100
700
3.5
10
0.25
PF
db
V
Typ
Max
Unit
V
V
V
nA
nA
Test Conditions
Ic=100uA
Ie=0
Ic= 1mA Ib=0
Ie= 100uA
Vcb= 60V
Veb= 5V
Ic=0
Ie=0
Ic= 0
Vce= 6V Ic= 2mA
Vce= 10V Ie=0 f=1MHz
Vce= 6V Ic= 0.1mA,
f=1KHz,Rg=10kΩ
Ic= 100mA Ib= 10mA
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width
≤300uS,Duty
cycle
≤2%
DEVICE MARKING:
KTC3875=1E
h
FE
Classification
h
FE
70-140
120—240
200—400
350—700
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
KTC3875
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
KTC3875
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA