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KTC3875

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size313KB,3 Pages
ManufacturerShandong Yiguang Electronic Joint Stock Co., Ltd.
Download Datasheet Parametric View All

KTC3875 Overview

Transistor

KTC3875 Parametric

Parameter NameAttribute value
MakerShandong Yiguang Electronic Joint Stock Co., Ltd.
package instruction,
Reach Compliance Codeunknow
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
KTC3875
NPN EPITAXIAL SILICON TRANSISTO
R
Package:
SOT-23
TECHNICAL DATA
General purpose application
*
Complement to KTA1504
*
Collector Current :Ic=150mA
*
low noise:NF=10db(max)
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
60
50
5
150
225
150
-55-150
Unit
V
V
V
mA
mW
PIN:
STYLE
NO.1
1
2
3
B
E
C
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector output capacitance
Noise Figure
Collector-Emitter Saturation Voltage
Symbol
BVcbo
BVceo
BVebo
Icbo
Iebo
Hfe
Cob
NF
Vce(sat)
70
2.0
1.0
0.1
Min
60
50
5.0
100
100
700
3.5
10
0.25
PF
db
V
Typ
Max
Unit
V
V
V
nA
nA
Test Conditions
Ic=100uA
Ie=0
Ic= 1mA Ib=0
Ie= 100uA
Vcb= 60V
Veb= 5V
Ic=0
Ie=0
Ic= 0
Vce= 6V Ic= 2mA
Vce= 10V Ie=0 f=1MHz
Vce= 6V Ic= 0.1mA,
f=1KHz,Rg=10kΩ
Ic= 100mA Ib= 10mA
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width
≤300uS,Duty
cycle
≤2%
DEVICE MARKING:
KTC3875=1E
h
FE
Classification
h
FE
70-140
120—240
200—400
350—700
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