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2N6650

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size82KB,1 Pages
ManufacturerGeneral Transistor Corp
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2N6650 Overview

Transistor

2N6650 Parametric

Parameter NameAttribute value
MakerGeneral Transistor Corp
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)10 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)100 W
surface mountNO
Nominal transition frequency (fT)20 MHz

2N6650 Related Products

2N6650 2N6578 2N6649 2N6576 MJ3001 MJ13335
Description Transistor Transistor Transistor Transistor Transistor Transistor
Reach Compliance Code unknow unknown unknown unknown unknown unknown
Maximum collector current (IC) 10 A 15 A 10 A 15 A 10 A 20 A
Configuration DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON Single
Minimum DC current gain (hFE) 1000 500 1000 500 1000 10
Maximum operating temperature 150 °C 200 °C 150 °C 200 °C 200 °C 200 °C
Polarity/channel type PNP NPN PNP NPN NPN NPN
Maximum power dissipation(Abs) 100 W 87 W 27 W 87 W 150 W 175 W
surface mount NO NO NO NO NO NO
Nominal transition frequency (fT) 20 MHz 10 MHz 20 MHz 10 MHz 1 MHz -
Base Number Matches - 1 1 1 1 1

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