2N6649 datasheet, PDF - EEWORLD Datasheet

2N6649: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size82KB，1 Pages; ManufacturerGeneral Transistor Corp

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Transistor

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	10 A
Configuration	DARLINGTON
Minimum DC current gain (hFE)	1000
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	27 W
surface mount	NO
Nominal transition frequency (fT)	20 MHz
Base Number Matches	1

	2N6649	2N6578	2N6576	MJ3001	MJ13335	2N6650
Description	Transistor	Transistor	Transistor	Transistor	Transistor	Transistor
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow
Maximum collector current (IC)	10 A	15 A	15 A	10 A	20 A	10 A
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	Single	DARLINGTON
Minimum DC current gain (hFE)	1000	500	500	1000	10	1000
Maximum operating temperature	150 °C	200 °C	200 °C	200 °C	200 °C	150 °C
Polarity/channel type	PNP	NPN	NPN	NPN	NPN	PNP
Maximum power dissipation(Abs)	27 W	87 W	87 W	150 W	175 W	100 W
surface mount	NO	NO	NO	NO	NO	NO
Nominal transition frequency (fT)	20 MHz	10 MHz	10 MHz	1 MHz	-	20 MHz
Base Number Matches	1	1	1	1	1	-

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