Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Solitron Devices Inc. |
Parts packaging code | TO-254AA |
package instruction | FLANGE MOUNT, S-MSFM-P3 |
Contacts | 3 |
Reach Compliance Code | unknow |
Other features | CUSTOM BENT LEAD OPTIONS ARE AVAILABLE |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 400 V |
Maximum drain current (ID) | 3.3 A |
Maximum drain-source on-resistance | 1.8 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-254AA |
JESD-30 code | S-MSFM-P3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | METAL |
Package shape | SQUARE |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 50 W |
Maximum pulsed drain current (IDM) | 13 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | PIN/PEG |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Maximum off time (toff) | 65 ns |
Maximum opening time (tons) | 35 ns |