CP388X-2N2484
NPN - Low Noise Transistor Die
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The CP388X-2N2484 is a silicon NPN transistor designed for low noise amplifier applications.
MECHANICAL SPECIFICATIONS:
Die Size
Die Thickness
Base Bonding Pad Size
Emitter Bonding Pad Size
Top Side Metalization
Back Side Metalization
Scribe Alley Width
Wafer Diameter
BACKSIDE COLLECTOR
R0
13 x 13 MILS
5.9 MILS
3.9 x 3.9 MILS
5.4 x 5.4 MILS
Al-Si – 17,000Å
Au – 9,000Å
1.8 MILS
5 INCHES
102,852
UNITS
V
V
V
mA
°C
Gross Die Per Wafer
SYMBOL
VCBO
VCEO
VEBO
IC
TJ, Tstg
MIN
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
ELECTRICAL
SYMBOL
ICBO
ICEO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
hFE
hFE
hfe
fT
fT
hie
hoe
hre
CHARACTERISTICS:
(TA=25°C)
TEST CONDITIONS
VCB=45V
VCE=5.0V
VEB=5.0V
IC=10μA
IC=10mA
IE=10μA
IC=1.0mA, IB=100μA
VCE=5.0V, IC=100μA
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
IC=1.0μA
IC=10μA
IC=100μA
IC=500μA
IC=1.0mA
IC=10mA
IC=1.0mA, f=1.0kHz
IC=50μA, f=5.0MHz
IC=0.5mA, f=30MHz
IC=1.0mA, f=1.0kHz
IC=1.0mA, f=1.0kHz
IC=1.0mA, f=1.0kHz
60
60
6.0
50
-65 to +150
MAX
10
2.0
10
UNITS
nA
nA
nA
V
V
V
V
V
60
60
6.0
0.5
30
100
175
200
250
150
15
60
3.5
800
900
0.35
0.7
500
24
40
800
MHz
MHz
kΩ
μS
x10
-6
R0 (20-June 2016)
CP388X-2N2484
Typical Electrical Characteristics
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ELECTRICAL
SYMBOL
Cob
NF
NF
NF
NF
CHARACTERISTICS - Continued:
(TA=25°C)
TEST CONDITIONS
VCB=5.0V, IE=0, f=140kHz
VCE=5.0V, IC=10μA, RS=10kΩ,
BW=15.7kHz, 3.0dB PTS @ 10Hz, 10kHz
VCE=5.0V, IC=10μA, RS=10kΩ, f=100Hz, BW=20Hz
VCE=5.0V, IC=10μA, RS=10kΩ, f=1.0kHz, BW=200Hz
VCE=5.0V, IC=10μA, RS=10kΩ, f=10kHz, BW=2.0kHz
MAX
6.0
3.0
10
3.0
2.0
UNITS
pF
dB
dB
dB
dB
R0 (20-June 2016)
CP388X-2N2484
Typical Electrical Characteristics
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R0 (20-June 2016)
BARE DIE PACKING OPTIONS
BARE DIE IN TRAY (WAFFLE) PACK
CT:
Singulated die in tray (waffle) pack.
(example: CP211-PART NUMBER-CT)
CM:
Singulated die in tray (waffle) pack 100% visually inspected as
per MIL-STD-750, (method 2072 transistors, method 2073 diodes).
(example: CP211-PART NUMBER-CM)
UNSAWN WAFER
WN:
Full wafer, unsawn, 100% tested with reject die inked.
(example: CP211-PART NUMBER-WN)
SAWN WAFER ON PLASTIC RING
WR:
Full wafer, sawn and mounted on plastic ring,
100% tested with reject die inked.
(example: CP211-PART NUMBER-WR)
SAWN WAFER ON METAL FRAME
WS:
Full wafer, sawn and mounted on metal frame,
100% tested with reject die inked.
(example: CP211-PART NUMBER-WS)
R0 (7-December 2015)
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OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
Central’s operations team provides the highest level of support to insure product is delivered on-time.
• Supply management (Customer portals)
• Custom bar coding for shipments
• Inventory bonding
• Custom product packing
• Consolidated shipping options
DESIGNER SUPPORT/SERVICES
Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2
nd
day air)
• Special wafer diffusions
• Online technical data and parametric search
• PbSn plating options
• SPICE models
• Package details
• Custom electrical curves
• Application notes
• Environmental regulation compliance
• Application and design sample kits
• Customer specific screening
• Custom product and package development
• Up-screening capabilities
CONTACT US
Corporate Headquarters & Customer Support Team
Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824
Support Team Fax: (631) 435-3388
www.centralsemi.com
Worldwide Field Representatives:
www.centralsemi.com/wwreps
Worldwide Distributors:
www.centralsemi.com/wwdistributors
For the latest version of Central Semiconductor’s
LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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