BCY59 datasheet, PDF - EEWORLD Datasheet

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BCY59: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size70KB，2 Pages; ManufacturerCentral Semiconductor

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BCY59 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN

BCY59 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Samacsys Descripti	Bipolar Transistors - BJT NPN 45Vcbo 7.0Vebo 100mA 340mW 1W
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Maximum off time (toff)	800 ns
Maximum opening time (tons)	150 ns

BCY59 Preview

DATA SHEET

BCY58, VII, VIII, IX, X

BCY59, VII, VIII, IX, X

NPN SILICON TRANSISTOR

JEDEC TO-18 CASE

DESCRIPTION

The CENTRAL SEMICONDUCTOR BCY58, BCY59 Series types are Silicon NPN Epitaxial Planar Transistors,

mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.

MAXIMUM RATINGS (TA=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

IC

Collector Current (Peak)

ICM

Base Current (Peak)

IBM

Power Dissipation

PD

Power Dissipation(TC=25°C)

PD

Operating and Storage

Junction Temperature

TJ,Tstg

Thermal Resistance

Θ

JA

Thermal Resistance

Θ

JC

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

ICBO

VCB= Rated VCBO

ICBO

VCB= Rated VCBO, TA=150°C

IEBO

VEB=5.0V

BVCBO

IC=10µA (BCY58)

BVCBO

IC=10µA (BCY59)

BVCEO

IC=2.0mA (BCY58)

BVCEO

IC=2.0mA (BCY59)

BVEBO

IE=1.0µA

VCE(SAT)

IC=10mA, IB=250µA

VCE(SAT)

IC=100mA, IB=2.5mA

IC=10mA, IB=250µA

VBE(SAT)

IC=100mA, IB=2.5mA

BCY58-VII

BCY59-VII

MIN

MAX

20 TYP

120

220

80

40

BCY58-VIII

BCY59-VIII

MIN

MAX

20

180

310

120

400

45

BCY58

32

7.0

100

200

340

1.0

-65 to +200

450

150

BCY59

45

UNITS

V

mA

mW

W

°C

°C/W

MIN

MAX

10

32

45

32

45

7.0

0.35

0.70

0.85

1.20

BCY58-X

BCY59-X

MIN

MAX

100

380

630

240

1000

60

0.60

0.75

BCY58-IX

BCY59-IX

MIN

MAX

40

250

460

160

630

60

UNITS

nA

µA

nA

V

SYMBOL

hFE

TEST CONDITIONS

VCE=5.0V, IC=10µA

VCE=5.0V, IC=2.0mA

VCE=1.0V, IC=10mA

VCE=1.0V, IC=100mA

(SEE REVERSE SIDE)

R1

BCY58/BCY59

NPN SILICON TRANSISTOR

ELECTRICAL CHARACTERISTICS Continued

SYMBOL

fT

Cob

Cib

NF

ton

td

tr

toff

ts

tf

ton

td

tr

toff

ts

tf

TEST CONDITIONS

VCE=5.0V, IC=10mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

VCE=5.0V, IC=200µA, RS=2kΩ, f=1.0kHz, B=200Hz

VCC=10V, IC=10mA, IB1=-IB2=1.0mA

VCC=10V, IC=100mA, IB1=-IB2=10mA

MIN

150

TYP

MAX

5.0

15

10

150

UNITS

MHz

pF

dB

ns

85

35

50

450

400

80

55

5.0

50

450

250

200

800

150

800

TO-18 PACKAGE - MECHANICAL OUTLINE

A

B

D

C

E

SYMBOL

A (DIA)

B (DIA)

C

D

E

F (DIA)

G (DIA)

H

I

J

DIMENSIONS

INCHES

MILLIMETERS

MIN

MAX

MIN

MAX

0.209 0.230 5.31

5.84

0.178 0.195 4.52

4.95

-

0.030

-

0.76

0.170 0.210 4.32

5.33

0.500

-

12.70

-

0.016 0.019 0.41

0.48

0.100

2.54

0.050

1.27

0.036 0.046 0.91

1.17

0.028 0.048 0.71

1.22

TO-18 (REV: R1)

F

LEAD #2

LEAD #1

G

H

LEAD #3

I

45°

J

R1

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BCY59 Related Products

	BCY59	BCY59LEADFREE	BCY58LEADFREE
Description	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
Is it lead-free?	Contains lead	Lead free	Lead free
Is it Rohs certified?	incompatible	conform to	conform to
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor
Parts packaging code	BCY	BCY	BCY
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	3	3	3
Reach Compliance Code	_compli	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	45 V	45 V	32 V
Configuration	SINGLE	SINGLE	SINGLE
JEDEC-95 code	TO-18	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e3	e3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	260
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz
Maximum off time (toff)	800 ns	800 ns	800 ns
Maximum opening time (tons)	150 ns	150 ns	150 ns

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