2N2222ATIN/LEAD datasheet, PDF

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2N2222ATIN/LEAD: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), NPN,; CategoryDiscrete semiconductor The transistor; File Size534KB，2 Pages; ManufacturerCentral Semiconductor

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2N2222ATIN/LEAD Overview

Small Signal Bipolar Transistor, 0.8A I(C), NPN,

2N2222ATIN/LEAD Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Reach Compliance Code	_compli
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.5 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Maximum off time (toff)	285 ns
Maximum opening time (tons)	35 ns

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2N2221A

2N2222A

SILICON

NPN TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2221A and

2N2222A are silicon NPN epitaxial planar transistors

designed for small signal, general purpose switching

applications.

MARKING: FULL PART NUMBER

TO-18 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

ICEV

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ, Tstg

Θ

JA

Θ

JC

UNITS

V

mA

mW

W

°C

°C/W

75

40

6.0

800

500

1.2

-65 to +200

350

146

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=60V

VCB=60V, TA=150°C

VCE=60V, VEB=3.0V

VEB=3.0V

IC=10μA

IC=10mA

IE=10μA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

VCE=10V,

IC=0.1mA

IC=1.0mA

IC=10mA

MAX

10

UNITS

nA

μA

nA

V

2N2222A

MIN

MAX

35

-

50

-

75

-

35

100

50

40

-

300

-

75

40

6.0

0.3

0.6

2N2221A

MIN

MAX

20

-

25

-

35

-

15

40

20

25

-

120

-

1.0

1.2

2.0

VCE=10V, IC=10mA, TA=-55°C

VCE=10V, IC=150mA

VCE=1.0V, IC=150mA

VCE=10V, IC=500mA

R4 (24-July 2013)

2N2222ATIN/LEAD Related Products

	2N2222ATIN/LEAD	2N2221ATIN/LEAD
Description	Small Signal Bipolar Transistor, 0.8A I(C), NPN,	Small Signal Bipolar Transistor, 0.8A I(C), NPN,
Is it Rohs certified?	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor
Reach Compliance Code	_compli	_compli
Maximum collector current (IC)	0.8 A	0.8 A
Collector-emitter maximum voltage	40 V	40 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	25
JEDEC-95 code	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	200 °C
Minimum operating temperature	-65 °C	-65 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.5 W	0.5 W
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	250 MHz
Maximum off time (toff)	285 ns	285 ns
Maximum opening time (tons)	35 ns	35 ns

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