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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SB1431-M
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2SB1431-M

Description
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size132KB，6 Pages
ManufacturerNEC Electronics
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2SB1431-M Overview

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

2SB1431-M Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)8 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)2000
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz

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The 2SB1431 is a Darlington power transistor that can directly
drive from the IC output. This transistor is ideal for motor drivers
and solenoid drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High h
FE
due to Darlington connection:
h
FE
≥
2,000 (V
CE
=
−2
V, I
C
=
−3
A)
• Mold package that does not require an insulating board or
insulation bushing
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
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 %DVH
 &ROOHFWRU
 (PLWWHU
(48,9$/(17 &,5&8,7
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25°C)
P
T
(Ta = 25°C)
T
j
T
stg
Ratings
−100
−100
−7.0
−8.0
−12
−0.8
25
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
* PW
≤
10 ms, duty cycle
≤
50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
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©
2002
1998

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2SB1431-M 2SB1431-L-AZ 2SB1431-K-AZ 2SB1431-L 2SB1431-K 2SB1431-M-AZ 2SB1431-AZ
Description Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Maker NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compli unknown unknown compliant compliant unknow unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 8 A 8 A 8 A 8 A 8 A 8 A 8 A
Collector-emitter maximum voltage 100 V 100 V 100 V 100 V 100 V 100 V 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 2000 3000 5000 3000 5000 2000 500
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz
Base Number Matches - 1 1 1 1 - -

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