TLP291
TOSHIBA PHOTOCOUPLER IRED & PHOTO-TRANSISTOR
TLP291
Power Supplies
Programmable Controllers
Hybrid ICs
TLP291 consists of photo transistor, optically coupled to an infrared emitting
diode. TLP291 is housed in the SO4 package, very small and thin coupler.
Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110
˚C)
and high isolation voltage (3750Vrms), it’s suitable for high-density surface
mounting applications such as small switching power supplies and
programmable controllers.
Collector-Emitter Voltage
Current Transfer Ratio
Rank GB
Isolation Voltage
Operation temperature
UL-recognized
cUL-recognized
VDE-approved
CQC-approved
: 80 V (min)
: 50% (min)
: 100% (min)
: 3750 Vrms (min)
: -55 to 110
˚C
: UL 1577, File No.E67349
: CSA Component Acceptance Service No.5A
File No.67349
: EN 60747-5-5, EN 62368-1 (Note 1)
: GB4943.1, GB8898 Japan and Thailand Factory
1
2
Note 1: When a VDE approved type is needed,
please designate the
Option(V4).
TOSHIBA
11-3C1
Weight: 0.05 g (typ.)
Unit: mm
Pin Configuration
TLP291
4
3
Construction Mechanical Rating
Creepage distance:
Clearance:
Insulation thickness:
5.0 mm (min)
5.0 mm (min)
0.4 mm (min)
1:ANODE
2:CATHODE
3:EMITTER
4:COLLECTOR
Start of commercial production
2012-02
© 2019
Toshiba Electronic Devices & Storage Corporation
1
2019-5-27
TLP291
Current Transfer Ratio (CTR) Rank ( Unless otherwise specified, Ta = 25°C)
Classification
(Note1)
Blank
Rank Y
Rank GR
Rank GB
TLP291
Rank YH
Rank GRL
Rank GRH
Rank BLL
75
100
150
200
150
200
300
400
Y+
G
G+
B
Current Transfer Ratio (%)
(I
C
/ I
F
)
I
F
= 5 mA, V
CE
= 5 V, Ta = 25°C
Min
Max
50
50
100
100
400
150
300
400
TYPE
Marking of Classification
Blank, YE, Y+, GR, GB, G, G+,B
YE
GR
GB
Note1: Specify both the part number and a rank in this format when ordering
(e.g.) rank GB: TLP291 (GB,E
For safety standard certification, however, specify the part number alone.
(e.g.)TLP291 (GB,E: TLP291
© 2019
Toshiba Electronic Devices & Storage Corporation
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2019-5-27
TLP291
Absolute Maximum Ratings
(Note)( Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Input forward current
Input forward current derating (Ta≥90°C)
Input forward current (pulsed )
LED
Input reverse voltage
Input power dissipation
Input power dissipation derating (Ta
≥
90°C)
Junction temperature
Collector-emitter voltage
DETECTOR
Emitter-collector voltage
Collector current
Collector power dissipation
Collector power dissipation derating(Ta≥25°C)
Junction temperature
Operating temperature range
Storage temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation derating(Ta≥25°C)
Isolation voltage
SYMBOL
I
F
∆I
F
/ΔTa
I
FP
V
R
P
D
ΔP
D
/ΔTa
T
j
V
CEO
V
ECO
I
C
P
C
∆P
C
/ΔTa
T
j
T
opr
T
stg
T
sol
P
T
∆P
T
/ΔTa
BV
S
(Note3)
(Note 2)
NOTE
RATING
50
-1.5
1
5
100
-3.0
125
80
7
50
150
-1.5
125
-55 to 110
-55 to 125
260 (10 s)
200
-2.0
3750
UNIT
mA
mA /°C
A
V
mW
mW/°C
°C
V
V
mA
mW
mW /°C
°C
°C
°C
°C
mW
mW /°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2: Pulse width
≤
100
μs,
frequency 100 Hz
Note3: AC, 60 s, R.H.≤60 %, Device considered a two terminal device: LED side pins shorted together and DETECTOR
side pins shorted together.
Electrical Characteristics
(Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Input forward voltage
LED
Input reverse current
Input capacitance
Collector-emitter breakdown voltage
DETECTOR
Emitter-collector breakdown voltage
Dark current
Collector-emitter capacitance
SYMBOL
V
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
I
CEO
C
CE
TEST CONDITION
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V
V
CE
= 48 V, Ta = 85 °C
V = 0 V, f = 1 MHz
MIN
1.1
-
-
80
7
-
-
-
TYP.
1.25
-
30
-
-
0.01
2
10
MAX
1.4
5
-
-
-
0.08
50
-
UNIT
V
μA
pF
V
V
μA
μA
pF
© 2019
Toshiba Electronic Devices & Storage Corporation
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2019-5-27
TLP291
Coupled Electrical Characteristics
(Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
I
F
= 5 mA, V
CE
= 5 V
Rank GB
I
F
= 1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= 8 mA
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 0.2 mA, I
F
= 1 mA
Rank GB
OFF-state collector current
I
C (off)
V
F
= 0.7 V, V
CE
= 48 V
MIN
50
100
-
30
-
-
-
-
TYP.
-
-
60
-
-
0.2
-
-
MAX
400
%
400
-
-
0.3
-
0.3
10
μA
V
%
UNIT
Current transfer ratio
I
C
/ I
F
Saturated current transfer ratio
I
C
/ I
F (sat)
Isolation Characteristics
(Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Total capacitance (input to output)
Isolation resistance
Isolation voltage
SYMBOL
C
S
R
S
BV
S
TEST CONDITION
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H.≤60 %
AC , 60 s
MIN
-
1×10
12
3750
TYP.
0.8
10
14
-
MAX
-
-
-
UNIT
pF
Ω
Vrms
Switching Characteristics
(Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
SYMBOL
t
r
t
f
t
on
t
off
t
on
t
s
t
off
R
L
= 1.9 kΩ
V
CC
= 5 V, I
F
= 16 mA
(Fig.1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100Ω
TEST CONDITION
MIN
-
-
-
-
-
-
-
TYP.
4
7
7
7
2
30
60
MAX
-
-
-
-
-
-
-
μs
μs
UNIT
(Fig.1) Switching Time Test Circuit
t
on
t
off
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Toshiba Electronic Devices & Storage Corporation
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2019-5-27
TLP291
I F - Ta
100
160
P C - Ta
Collector power dissipation P
C
(mW)
140
120
100
80
60
40
20
0
-20
0
20
40
60
80
100
120
I F (mA)
80
Input forward current
60
40
20
(Note) This curve shows the
maximum limit to the input
forward current.
0
20
40
60
80
100
120
0
-20
(Note) This curve shows the
maximum limit to the collector
power dissipation.
Ambient temperature
Ta (˚C)
Ambient temperature
Ta (˚C)
IFP-DR
IF-VF
3000
Input forward current (pulsed)
I
FP
(mA)
Ta=25˚C
1000
500
300
Input forward current I
F
(mA)
Pules width
≤100μs
100
10
110˚C
85˚C
50˚C
25˚C
0˚C
-25˚C
-55˚C
100
50
30
1
(Note) This curve shows the
maximum limit to the input
forward current (pulsed).
10
-3
10
0.1
-1
10
-2
10
10
0
0.6
0.8
1
1.2
1.4
1.6
V
F
1.8
(V)
2
Duty cycle ratio D
R
∆
V F /
∆
Ta - I F
-3.2
-2.8
1000
Input forward voltage
IFP - VFP
Input forward current (pulsed) I
FP
(mA)
Input forward current derating
ΔV
F
/ΔTa (mV/°C)
-2.4
-2
-1.6
-1.2
-0.8
-0.4
0.1
1
10
100
100
10
Pulse width
≤10μs
Repeative frequency=100Hz
Ta=25°C
1
0.6
1
1.4
1.8
2.2
2.6
3
3.4
Input forward current
I
F
(mA)
Input forward voltage (pulsed) V
FP
(V)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019
Toshiba Electronic Devices & Storage Corporation
5
2019-5-27
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