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MA4ST562A

Description
L-KU BAND, 6.8pF, 22V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
File Size101KB,3 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
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MA4ST562A Overview

L-KU BAND, 6.8pF, 22V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

MA4ST562A Parametric

Parameter NameAttribute value
Objectid1407534551
package instructionO-CEMW-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage22 V
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio3.091
Nominal diode capacitance6.8 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandL BAND TO KU BAND
JESD-30 codeO-CEMW-N2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor400
Maximum reverse current0.05 µA
Reverse test voltage20 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationHYPERABRUPT
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