Standard SRAM, 256X1, 1000ns, MOS, CDIP16
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
package instruction | DIP, DIP16,.3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Maximum access time | 1000 ns |
JESD-30 code | R-GDIP-T16 |
JESD-609 code | e0 |
memory density | 256 bi |
Memory IC Type | STANDARD SRAM |
memory width | 1 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 16 |
word count | 256 words |
character code | 256 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 256X1 |
Output characteristics | 3-STATE |
Exportable | NO |
Package body material | CERAMIC, GLASS-SEALED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP16,.3 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum supply voltage (Vsup) | 5.25 V |
Minimum supply voltage (Vsup) | 4.75 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | MOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Base Number Matches | 1 |