Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Supertex |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 0.25 A |
| Maximum drain-source on-resistance | 25 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 5 pF |
| JEDEC-95 code | TO-39 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Maximum power consumption environment | 3 W |
| Maximum power dissipation(Abs) | 3 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| VP1310N2 | VP1310N8 | VP1304N2 | VP1306N2 | |
|---|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | Power Field-Effect Transistor, 0.2A I(D), 100V, 25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | Supertex | Supertex | Supertex | Supertex |
| Reach Compliance Code | unknow | unknown | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | 100 V | 40 V | 60 V |
| Maximum drain current (ID) | 0.25 A | 0.2 A | 0.25 A | 0.25 A |
| Maximum drain-source on-resistance | 25 Ω | 25 Ω | 25 Ω | 25 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 5 pF | 5 pF | 5 pF | 5 pF |
| JEDEC-95 code | TO-39 | TO-243AA | TO-39 | TO-39 |
| JESD-30 code | O-MBCY-W3 | R-PSSO-F3 | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | METAL | PLASTIC/EPOXY | METAL | METAL |
| Package shape | ROUND | RECTANGULAR | ROUND | ROUND |
| Package form | CYLINDRICAL | SMALL OUTLINE | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| Maximum power dissipation(Abs) | 3 W | 1.6 W | 3 W | 3 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | YES | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | FLAT | WIRE | WIRE |
| Terminal location | BOTTOM | SINGLE | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| package instruction | CYLINDRICAL, O-MBCY-W3 | - | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Maximum power consumption environment | 3 W | - | 3 W | 3 W |
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