VP1310N8 datasheet, PDF - EEWORLD Datasheet

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VP1310N8: DescriptionPower Field-Effect Transistor, 0.2A I(D), 100V, 25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA; CategoryDiscrete semiconductor The transistor; File Size204KB，4 Pages; ManufacturerSupertex

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VP1310N8 Overview

Power Field-Effect Transistor, 0.2A I(D), 100V, 25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA

VP1310N8 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Supertex
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	0.2 A
Maximum drain-source on-resistance	25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JEDEC-95 code	TO-243AA
JESD-30 code	R-PSSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	1.6 W
Maximum pulsed drain current (IDM)	0.7 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	13 ns
Maximum opening time (tons)	10 ns

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VP1310N8 Related Products

	VP1310N8	VP1310N2	VP1304N2	VP1306N2
Description	Power Field-Effect Transistor, 0.2A I(D), 100V, 25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Supertex	Supertex	Supertex	Supertex
Reach Compliance Code	unknown	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	40 V	60 V
Maximum drain current (ID)	0.2 A	0.25 A	0.25 A	0.25 A
Maximum drain-source on-resistance	25 Ω	25 Ω	25 Ω	25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF	5 pF	5 pF	5 pF
JEDEC-95 code	TO-243AA	TO-39	TO-39	TO-39
JESD-30 code	R-PSSO-F3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	METAL	METAL	METAL
Package shape	RECTANGULAR	ROUND	ROUND	ROUND
Package form	SMALL OUTLINE	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	1.6 W	3 W	3 W	3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	FLAT	WIRE	WIRE	WIRE
Terminal location	SINGLE	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
package instruction	-	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Maximum power consumption environment	-	3 W	3 W	3 W

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