2SB764L
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
PNP Plastic Encapsulated Transistor
FEATURE
●
●
●
●
Power dissipation P
CM
: 0.9 W (Tamb=25℃)
Collector current I
CM
: -1 A
Collector-base voltage V
(BR)CBO
: -60 V
Operating and storage junction temperature range
T
J
, T
STG
: -55℃ to +150℃
A
J
D
Millimeter
Min.
Max.
4.70
5.10
7.80
8.20
13.80
14.20
3.70
4.10
0.35
0.55
0.35
0.45
1.27 TYP.
1.28
1.58
2.44
2.64
0.60
0.80
TO-92L
G
H
1Emitter
2Collector
3Base
Collector
2
REF.
B
K
3
PACKAGING INFORMATION
Weight: 0.3900 g (Approximate)
Base
E
C
F
1
Emitter
A
B
C
D
E
F
G
H
J
K
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
f
T
C
OB
Min.
-60
-50
-5
-
-
60
30
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
150
20
Max.
-
-
-
-1
-1
320
-
-0.7
-1.2
-
-
Unit
V
V
V
μA
μA
Test Conditions
I
C
= -10μA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CB
= -50V, I
E
= 0
V
EB
= -5V, I
C
= 0
V
CE
= -2V, I
C
= -0.05A
V
CE
= -2V, I
C
= -1A
V
V
MHz
pF
I
C
= -0.5A, I
B
= -0.05A
I
C
= -0.5A, I
B
= -0.05A
V
CE
= -10V, I
C
= -0.05A
V
CB
= -10V, I
E
= 0, f = 1 MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
D
60 - 120
E
100 - 200
F
160 - 320
01-April-2009 Rev. A
Page 1 of 3
FPGA/CPLD
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