MASK ROM, 8MX8, 150ns, CMOS, PDIP42, 0.600 INCH, DIP-42
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| Parts packaging code | DIP |
| package instruction | DIP, DIP42,.6 |
| Contacts | 42 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum access time | 150 ns |
| JESD-30 code | R-PDIP-T42 |
| JESD-609 code | e0 |
| length | 52.42 mm |
| memory density | 67108864 bi |
| Memory IC Type | MASK ROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 42 |
| word count | 8388608 words |
| character code | 8000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 8MX8 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP42,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum seat height | 5.08 mm |
| Maximum slew rate | 0.07 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 15.24 mm |
| K3N7C3000M-DC15 | K3N7C3000M-DC12 | |
|---|---|---|
| Description | MASK ROM, 8MX8, 150ns, CMOS, PDIP42, 0.600 INCH, DIP-42 | MASK ROM, 8MX8, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42 |
| Is it Rohs certified? | incompatible | incompatible |
| Maker | SAMSUNG | SAMSUNG |
| Parts packaging code | DIP | DIP |
| package instruction | DIP, DIP42,.6 | DIP, DIP42,.6 |
| Contacts | 42 | 42 |
| Reach Compliance Code | compli | compli |
| ECCN code | EAR99 | EAR99 |
| Maximum access time | 150 ns | 120 ns |
| JESD-30 code | R-PDIP-T42 | R-PDIP-T42 |
| JESD-609 code | e0 | e0 |
| length | 52.42 mm | 52.42 mm |
| memory density | 67108864 bi | 67108864 bi |
| Memory IC Type | MASK ROM | MASK ROM |
| memory width | 8 | 8 |
| Number of functions | 1 | 1 |
| Number of terminals | 42 | 42 |
| word count | 8388608 words | 8388608 words |
| character code | 8000000 | 8000000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C |
| organize | 8MX8 | 8MX8 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | DIP | DIP |
| Encapsulate equivalent code | DIP42,.6 | DIP42,.6 |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| power supply | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified |
| Maximum seat height | 5.08 mm | 5.08 mm |
| Maximum slew rate | 0.07 mA | 0.07 mA |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V |
| surface mount | NO | NO |
| technology | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| width | 15.24 mm | 15.24 mm |
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