SEMICONDUCTOR
16T Series
TRIACs, 16A
Snubberless, Logic Level and Standard
RoHS
RoHS
Features
●
Medium current Triac
●
Low thermal resistance with clip bonding
●
Low thermal resistance insulation ceramic
for insulated 16T
●
High commutation (4Q) or very high
commutation (3Q) capability
●
RoHS compliant, UL certified (File NO:E320098)
●
Insulated tab (16TxxAI series, rated at 2500 V
RMS
)
TO-263
(D²PAK)
(16Txx H)
A2
Applications
●
Snubberless versions (With Suffix W)
especially recommended for use on
inductive loads, because of their high
commutation performances
●
On/off or phase angle function in applications
such as static relays, light dimmers and
appliance motor speed controllers
A1
A2
G
1
2
3
TO-220AB
(non-Insulated)
(16Txx A)
TO-220AB
(lnsulated)
(16Txx AI)
Description
Available either in through-hole or surface-mount
packages, the 16TxxA and 16TxxAl triacs series are
suitable for general purpose mains power AC switcging
SYMBOL
I
T(RMS)
V
DRM
/V
RRM
I
GT(Q1)
VALUE
16
to
5 to 50
UNIT
A
V
mA
Device summary
SYMBOL
I
T(RMS)
V
DRM
/V
RRM
I
GT
(Snubberless)
I
GT
(logic level)
I
GT
(standard)
Note
1:
Insulated
PARAMETER
On-state RMS current
Repetitive peak off-state voltage
Triggering gate current
Triggering gate current
Triggering gate current
16TxxAI
(1)
16
600/800/1000
35/50
10
25/50
16TxxA
16
600/800/1000
35/50
10
25/50
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Page 1 of 7
SEMICONDUCTOR
16T Series
RoHS
RoHS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current
(full
sine wave)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
SYMBOL
I
T(RMS)
TO-220insulate
I
TSM
I t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
2
TEST CONDITIONS
TO-220/TO-263
T
c
= 110ºC
T
c
= 86ºC
t = 20 ms
t = 16.7 ms
VALUE
16
160
168
128
UNIT
A
F =50 Hz
F =60 Hz
t p = 10 ms
F =100 Hz
T
p
=20 µs
A
A
2
s
A/µs
A
W
ºC
T
j
=125ºC
T
j
=125ºC
T
j
=125ºC
50
4
1
- 40
to
+ 150
- 40
to
+ 125
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
16Txxxx
SYMBOL
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
dV/dt
(2)
V
D
= V
DRM
, R
L
= 3.3KΩ
T
j
= 125°C
I
T
= 500 mA
I
-
III
I
G
= 1.2 I
GT
II
V
D
= 67% V
DRM
, gate open ,T
j
= 125°C
(dV/dt)c = 0.1 V/µs
(dI/dt)c
(2)
(dV/dt)c = 10 V/µs
Without snubber
Note
1:
Minimum
l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
For
both polarities of A2 referenced to A1.
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
MIN.
MAX.
MIN.
TEST CONDITIONS
QUADRANT
SW
I
-
II
-
III
V
D
= 12 V, R
L
= 33Ω
I
-
II
-
III
I
-
II
-
III
MAX.
MIN.
MAX.
15
25
30
40
8.5
3
-
1.3
0.2
40
50
60
500
-
-
8.5
55
70
mA
80
1000
-
-
14
A/ms
V/µs
V
V
mA
MAX.
10
CW
35
BW
50
mA
Unit
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Page 2 of 7
SEMICONDUCTOR
16T Series
RoHS
RoHS
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
Standard (4 quadrants)
16Txxxx
SYMBOL
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 33Ω
IV
ALL
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
, gate open, T
j
= 125°C
(dI/dt)c = 7 A/ms, T
j
= 125°C
I
-
III
-
IV
II
dV/d
t(2)
(dV/dt)c
(2)
MIN.
MIN.
ALL
MAX.
MAX.
25
40
80
200
5
C
MAX.
25
50
1.3
0.2
50
60
120
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
UNIT
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
STATIC CHARACTERISTICS
SYMBOL
V
TM(2)
V
t0
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 22.5 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
D
=
V
DRM
V
R
=
V
RRM
TEST CONDITIONS
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
MAX.
T
j
= 125°C
1
mA
MAX.
MAX.
MAX.
VALUE
1.55
0.85
25
5
UNIT
V
V
mΩ
µA
Note
1:
Minimum
l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
For
both polarities of A2 referenced to A1.
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
R
th(j-a)
Junction to case
(AC)
Junction to ambient
S
(1)
=1cm²
TO-220AB, D²PAK
TO-220AB Insulated
D²PAK
TO-220AB Insulated, TO-220AB
VALUE
1.2
2.1
45
60
UNIT
°C/W
°C/W
Note
1:
S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
16TxxA-B/1 6TxxAl-B
16TxxA-BW/16TxxAl-BW
16TxxA-C/16TxxAl-C
16TxxA-CW/16TxxAl-CW
16TxxA-SW/16TxxAl-SW
16TxxH-SW
16TxxH-CW
V
V
V
V
V
V
V
800
V
V
V
V
V
V
V
V
1000
V
V
V
V
V
V
V
V
50
mA
50
mA
25
mA
35
mA
10
mA
10
mA
35
mA
Standard
Snubberless
Standard
Snubberless
Logic level
Logic level
Snubberless
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
D²PAK
D²PAK
SENSITIVITY
TYPE
PACKAGE
www.nellsemi.com
Page 3 of 7
SEMICONDUCTOR
16T Series
RoHS
RoHS
ORDERING INFORMATION
ORDERING TYPE
16TxxA-yy
16TxxAI-yy
16TxxH-yy
MARKING
16TxxA-yy
16TxxAI-yy
16TxxH-yy
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-236(D
2
PAK)
WEIGHT
2.0g
2.3g
2.0g
BASE Q,TY
50
50
50
DELIVERY MODE
Tube
Tube
Tube
Note:
xx
=
voltage, yy
=
sensitivity
ORDERING INFORMATION SCHEME
16 T 06
Current
16 = 16A
A - BW
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
H = TO-263 (D²PAK)
IGT Sensitivity
B
= 50mA
Standard
C
= 25mA
Standard
SW
= 10mA
Logic Level
BW
= 50mA
Snubberless
CW
= 35mA
Snubberless
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Page 4 of 7
SEMICONDUCTOR
16T Series
RoHS
RoHS
Fig.1 Maximum power dissipation versus
on-state rms current (full cycle)
Fig.2 On-state rms current versus case
temperature (full cycle)
I
T(RMS)
(A)
18
16
14
12
10
8
6
4
TO-220AB
insulated
TO-263AB
P(W)
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
IT
(RMS)
(A)
8
10
12
14
16
2
0
0
T
C
(°C)
25
50
75
100
125
Fig.3 On-state current versus ambient
temperature (full cycle)
Fig.4 Relative variation of thermal impedance
versus pulse duration
K=[Zth
/R
th
]
1E+0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
T(RMS)
(A)
printed circuit board Fr4, copper thickness:35 µm
D²PAK
(S=1cm²)
Zth(j-c)
Zth(j-a)
1E-1
Tc(°c)
0
25
50
75
100
125
1E-2
1E-3
tp(s)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Fig.5 On-state characteristics (maximum values)
Fig.6 surge peak on- state current versus
number of cycles
200
100
I
TM
(A)
Tj max.
Vto=0.85V
Rd=25mΩ
180
160
140
120
T
j
=25°c
I
TSM
(A)
t=20ms
T
j
=T
j
max.
Non repetitive
Tjinitial=25°C
One cycle
100
80
60
40
Repetitive
Tc=85°C
10
1
0.5
1.0
1.5
2.0
V
TM
(V)
2.5
3.0
3.5
4.0
4.5
5.0
20
0
1
10
Number of cycles
100
1000
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Page 5 of 7
Microcontroller MCU
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