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ER3B-AU_R1_100A1

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size299KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER3B-AU_R1_100A1 Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

ER3B-AU_R1_100A1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionSMC, 2 PIN
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101; TS 16949
Maximum repetitive peak reverse voltage100 V
Maximum reverse current1 µA
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

ER3B-AU_R1_100A1 Preview

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ER3A-AU~ER3J-AU
SURFACE MOUNT RECTIFIER
VOLTAGE
FEATURES
• For surface mounted applications
0.128(3.25)
0.108(2.75)
0.245(6.22)
0.220(5.59)
0.280(7.11)
0.260(6.60)
0.012(0.305)
0.006(0.152)
0.103(2.62)
0.079(2.00)
0.050(1.27)
0.030(0.76)
0.320(8.13)
0.305(7.75)
0.008(0.203)
0.002(0.051)
50 to 600 Volts
CURRENT
3 Amperes
• High temperature metallurgically bonded-no compression
contacts as found in other diode-constructed rectifiers
• Glass passivated junction
• Easy pick and place
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Acqire quality system certificate : TS16949
• AEC-Q101 qualified
• Lead free in comply with EU RoHS 2002/95/EC directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: JEDEC DO-214AB molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: Indicated by cathode band
• Standard packaging: 16mm tape (EIA-481)
• Weight: 0.0082 ounce, 0.2325 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PA RA ME TE R
Ma xi mum R e current P e ak R e ve rs e Vo lta ge
Ma xi mum R MS Vo ltag e
Ma xi mum D C B lo ck i ng Vo lta ge
Ma xi mum A ve rag e F orward C urrent a t T
L
=7 5
O
C
P e ak F o rwa rd S urg e C urre nt : 8 .3ms s i ng le ha lf s i ne -wave
supe ri mp os ed on ra te d loa d ( JE D E C metho d)
Ma xi mum F o rward Voltag e at 3 A
Ma xi mum D C Reve rse C urrent a t Ra ted D C B loc ki ng
Vo lta ge
Ma xi mum R e vers e R e co ve ry Ti me ( No te s 1 )
Typi ca l J uncti o n C a p a ci tance (No te s 2 )
Typi ca l The rmal Res i stanc e (No te s 3 )
Op erati ng a nd S torag e Temp era ture Ra nge
T
J
=2 5
O
C
T
J
=1 00
O
C
S YMB OL E R3A -A U E R3 B -A U E R3 C -A U E R3D -A U E R3 E -A U E R3 G-A U E R3 J-A U UNITS
V
RRM
V
RMS
V
DC
I
F (AV )
I
FS M
V
F
I
R
t
rr
C
J
R
θJL
T
J
,T
S TG
0 .95
1
2 00
35
45
16
-55 to + 1 50
50
35
50
10 0
70
10 0
15 0
10 5
15 0
2 00
14 0
2 00
3
10 0
1.25
1 .7
30 0
21 0
30 0
4 00
28 0
4 00
6 00
42 0
6 00
V
V
V
A
A
V
μA
ns
pF
O
C /
W
C
O
NOTES:1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
2. Measured at 1 MHz and applied V
r
= 4.0 volts.
3. 8.0 mm
2
( .013mm thick ) land areas.
October 23,2012-REV.06
PAGE . 1
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