TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Parameter Name | Attribute value |
Maker | NXP |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 180 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 200 V |
Maximum drain current (ID) | 16 A |
Maximum drain-source on-resistance | 0.18 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 64 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
PHP18NQ20T | PHB18NQ20T/T3 | PHB18NQ20T | |
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Description | TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
package instruction | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | unknow | unknown | unknow |
ECCN code | EAR99 | EAR99 | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 180 mJ | 180 mJ | 180 mJ |
Shell connection | DRAIN | DRAIN | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 200 V | 200 V | 200 V |
Maximum drain current (ID) | 16 A | 16 A | 16 A |
Maximum drain-source on-resistance | 0.18 Ω | 0.18 Ω | 0.18 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 |
Number of components | 1 | 1 | 1 |
Number of terminals | 3 | 2 | 2 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum pulsed drain current (IDM) | 64 A | 64 A | 64 A |
Certification status | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | YES | YES |
Terminal form | THROUGH-HOLE | GULL WING | GULL WING |
Terminal location | SINGLE | SINGLE | SINGLE |
transistor applications | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON |
Maker | NXP | - | NXP |