|
934066631127 |
BUK9E3R7-60E,127 |
Description |
120A, 60V, 0.0037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3 |
mosfet N-CH 60v 120a i2pak |
Maker |
NXP |
NXP |
package instruction |
IN-LINE, R-PSIP-T3 |
IN-LINE, R-PSIP-T3 |
Reach Compliance Code |
unknow |
not_compliant |
Other features |
AVALANCHE RATED |
AVALANCHE RATED |
Avalanche Energy Efficiency Rating (Eas) |
404 mJ |
404 mJ |
Shell connection |
DRAIN |
DRAIN |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
60 V |
60 V |
Maximum drain current (ID) |
120 A |
120 A |
Maximum drain-source on-resistance |
0.0037 Ω |
0.0037 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code |
TO-262AA |
TO-262AA |
JESD-30 code |
R-PSIP-T3 |
R-PSIP-T3 |
Number of components |
1 |
1 |
Number of terminals |
3 |
3 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
IN-LINE |
IN-LINE |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
Maximum pulsed drain current (IDM) |
758 A |
758 A |
Guideline |
AEC-Q101; IEC-60134 |
AEC-Q101; IEC-60134 |
surface mount |
NO |
NO |
Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
Terminal location |
SINGLE |
SINGLE |
transistor applications |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |